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NTST30120CT, NTSJ30120CTG, NTSB30120CT?1G, NTSB30120CTG,
NTSB30120CTT4G
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
120
V
Average Rectified Forward Current
(Rated VR, TC
= 125
°C) Per device
Per diode
IF(AV)
30
15
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC
= 130
°C) Per device
Per diode
IFRM
60
30
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
A
Operating Junction Temperature
TJ
?40 to +150
°C
Storage Temperature
Tstg
?40 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/s
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Symbol
NTST30120CTG
NTSB30120CT?1G
NTSB30120CTG
NTSJ30120CTG
Unit
Maximum Thermal Resistance per Diode
Junction?to?Case
Junction?to?Ambient
RJC
RJA
2.5
70
1.14
46.6
4.05
105
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Per Leg unless otherwise noted)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(IF
= 5 A, T
J
= 25
°C)
(IF
= 7.5 A, T
J
= 25
°C)
(IF
= 15 A, T
J
= 25
°C)
(IF
= 5 A, T
J
= 125
°C)
(IF
= 7.5 A, T
J
= 125
°C)
(IF
= 15 A, T
J
= 125
°C)
vF
0.56
0.71
0.90
0.50
0.60
0.68
?
?
1.08
?
?
0.76
V
Maximum Instantaneous Reverse Current (Note 1)
(VR
= 90 V, T
J
= 25
°C)
(VR
= 90 V, T
J
= 125
°C)
(Rated dc Voltage, TJ
= 25
°C)
(Rated dc Voltage, TJ
= 125
°C)
IR
16
11
?
25
?
?
800
100
A
mA
A
mA
1. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%
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